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Understanding Ultrahigh Doping: The Case of Boron in Silicon

2003; American Physical Society; Volume: 90; Issue: 2 Linguagem: Inglês

10.1103/physrevlett.90.026103

1092-0145

Xuan Luo, Shengbai Zhang, Su‐Huai Wei,

Advancements in Semiconductor Devices and Circuit Design

Using first-principles calculations, we develop a theory for ultrahigh impurity doping in semiconductors. Our study of B in Si explains why boron solubility in epitaxial growth could exceed the solid solubility to reach the kinetic solubility, and, with adequate surface passivation, to reach even higher values. We further show that the partial ionization at high B concentration, C(B), observed by experiment is predominantly an electron chemical potential effect, not a boron clustering effect. Our calculated hole concentration over a wide C(B) range is in reasonable agreement with experiments.