Current understanding of annealing texture evolution in thin films and interconnects

2005; De Gruyter; Volume: 96; Issue: 3 Linguagem: Inglês

10.3139/146.101029

ISSN

0044-3093

Autores

Dong Nyung Lee,

Tópico(s)

Semiconductor materials and devices

Resumo

Abstract When deposits obtained by physical and chemical vapor deposition, electrodeposition, and electroless-deposition are annealed, they undergo recrystallization or abnormal grain growth to reduce their energy stored during deposition. The driving force for recrystallization is mainly due to dislocations, whereas that for abnormal grain growth is due to grain boundary energy, surface energy, interface energy or strain energy, or their combinations. During recrystallization and abnormal grain growth, a texture change can take place. Models for the evolution of recrystallization and abnormal grain growth textures are discussed.

Referência(s)
Altmetric
PlumX