Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system
1984; American Institute of Physics; Volume: 44; Issue: 6 Linguagem: Inglês
10.1063/1.94857
ISSN1520-8842
AutoresK.K. Ng, W. J. Polito, J. R. Ligenza,
Tópico(s)Semiconductor materials and devices
ResumoThe growth kinetics of thin silicon oxide films less than 300 Å are studied by using a stainless steel controlled ambient oxidation system. The oxidation system features resistive heating of silicon and high vacuum capability of 10−8 Torr. It is shown that the data, obtained in the oxygen pressure range of 0.01–0.5 atmosphere and in the temperature range of 930–1030 °C, can be approximated by parabolic growth law, with an activation energy of 1.34 eV. Electrical characteristics pertinent to metal-oxide-semiconductor devices are also described.
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