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Power Rectifiers and Transistors

1952; Institute of Electrical and Electronics Engineers; Volume: 40; Issue: 11 Linguagem: Inglês

10.1109/jrproc.1952.273990

2162-6634

R. N. Hall,

Semiconductor materials and interfaces

The behavior of donor, acceptor, and ohmic contacts prepared by fusing impurity metals to germanium is discussed. Power rectifiers having rectification ratios as high as 107 can be made by fusing donor and acceptor contacts to opposite surfaces of a germanium wafer. An analysis of their electrical characteristics is presented which agrees well with the measured performance. The properties of transistors prepared in a similar manner and which are capable of 100 watts of output power are described.