The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
2010; American Institute of Physics; Volume: 97; Issue: 18 Linguagem: Inglês
10.1063/1.3513400
ISSN1520-8842
AutoresJang‐Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Jin‐Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sangyoon Lee,
Tópico(s)Advanced Memory and Neural Computing
ResumoThis study examined the effect of gate dielectric materials on the light-induced bias instability of Hf–In–Zn–O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.
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