Hot Filament Chemical Vapor Deposition of Polyoxymethylene as a Sacrificial Layer for Fabricating Air Gaps
2001; Electrochemical Society; Volume: 4; Issue: 11 Linguagem: Inglês
10.1149/1.1402496
ISSN1944-8775
AutoresLeslie S. Loo, Karen K. Gleason,
Tópico(s)High voltage insulation and dielectric phenomena
ResumoA method for synthesizing polyoxymethylene (POM) film at high deposition rates was achieved via hot filament chemical vapor deposition (HFCVD). Nuclear magnetic resonance spectra show that the structure of the polymer is linear, rather than cross-linked (which plasma enhanced CVD would have produced). The linear structure is responsible for its ease of decomposition at less than 300°C and leaving behind negligible residue. Thus, the HFCVD POM film is proposed as a novel sacrificial layer for fabricating air gaps, as it could offer the advantages of shorter removal time, decreased heat load, and ease of process integration over conventional methods and materials. © 2001 The Electrochemical Society. All rights reserved.
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