Hydrogenated crystalline silicon fabricated at low-substrate temperatures by reactive sputtering in He-H2 atmosphere
1981; Elsevier BV; Volume: 40; Issue: 2 Linguagem: Inglês
10.1016/0038-1098(81)90158-7
ISSN1879-2766
AutoresTakeshi Imura, Kaiki Mogi, Akio Hiraki, Satοru Nakashima, Akiyoshi Mitsuishi,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoCrystallized films of silicon containing about 5 at.% of bonded hydrogen have been fabricated by reactive sputtering in He and H2 atmosphere at low substrate temperatures below 250°C. The structure was investigated by X-ray diffraction, Raman scattering, infrared and visible absorption measurements. The infrared spectra show two or three sharp absorption peaks at the stretching vibrational region of Si-H. The processes of both sputtering and crystallization are strongly affected by the presence of H2.
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