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High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

2012; Institute of Physics; Volume: 5; Issue: 8 Linguagem: Inglês

10.1143/apex.5.082102

1882-0786

Shimpei Takagi, Yohei Enya, Takashi Kyono, Masahiro Adachi, Yusuke Yoshizumi, Takamichi Sumitomo, Yuichiro Yamanaka, Tetsuya Kumano, Shinji Tokuyama, Kazuhide Sumiyoshi, Nobuhiro Saga, Masaki Ueno, Koji Katayama, Takatoshi Ikegami, Takao Nakamura, Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai, Kaori Naganuma, Noriyuki Fuutagawa, Yoshiro Takiguchi, Tatsushi Hamaguchi, Masao Ikeda,

Nanowire Synthesis and Applications

Continuous-wave operation of InGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated. Wall plug efficiencies (WPEs) as high as 7.0–8.9% are realized in the wavelength range of 525–532 nm, which exceed those reported for c-plane LDs. The longest lasing wavelength has reached 536.6 nm under cw operation. These results suggest that the InGaN green LDs on the {2021} plane are better suited as light sources for applications requiring wavelengths over 525 nm.