Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures
2013; Elsevier BV; Volume: 561; Linguagem: Inglês
10.1016/j.jallcom.2013.01.131
ISSN1873-4669
AutoresXiangyang Li, Di Li, H.X. Xin, Jian Zhang, Chunjun Song, Xiaoying Qin,
Tópico(s)Thermal Radiation and Cooling Technologies
ResumoThe thermoelectric properties of the bismuth doped compounds Cu3Sb1−xBixSe4, prepared by melting method and spark plasma sintering (SPS) technique, were investigated in the temperature range from 300 K to 600 K. The results indicate that the electrical resistivity of the Bi-doped compounds decreased as compare to Cu3SbSe4 due to the increase in the hole concentration; also thermal conductivity lowered after doping, which can be attributed to the strong phonons scattering by atom mass fluctuations. Moreover, it is found that the state of density effective mass m* increases for the doped compounds, which could be responsible for the enhanced thermopower at T > ∼400 K. The largest ZTmax = 0.7 is achieved at 600 K for Cu3Sb0.98Se0.02, which is about 3.3 times larger than that of the un-doped compounds.
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