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Reduced leakage current and improved breakdown voltage of silicon oxide films deposited in low energy RF discharges at room temperature

1992; IOP Publishing; Volume: 7; Issue: 8 Linguagem: Inglês

10.1088/0268-1242/7/8/018

1361-6641

Ming-Shing Wu, Tien-I Bao, Lin I,

Electrostatic Discharge in Electronics

The I-V characteristics of SiOx films deposited in an RF magnetron system with low pressure ( approximately 6 mTorr) SiH4/O2/Ar gas mixtures have been studied. With the enhanced surface processes under the high flux, low energy ion bombardment, the substrate temperature ( 300 degrees C). The film deposited under the optimum conditions without annealing has a very smooth surface, low leakage current (<10-10 A for F<6 MV cm-1) and high breakdown field strength (9-10 MV cm-1). It is found that the breakdown voltage is strongly correlated with the initial injection current. The film roughness, porosity and stoichiometry are the important factors for the electrical properties and can be controlled. The effects of RF power, deposition rate, and the oxygen to silane partial pressure ratio are investigated and discussed.