Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements
2011; Trans Tech Publications; Volume: 679-680; Linguagem: Inglês
10.4028/www.scientific.net/msf.679-680.193
ISSN1662-9760
AutoresXi Song, Anne Elisabeth Bazin, Jean-François Michaud, F. Cayrel, Marcin Zieliński, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier,
Tópico(s)Semiconductor materials and interfaces
ResumoTwo electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method (cTLM) which allows extracting the specific contact resistance and Scanning Spreading Resistance Microscopy (SSRM) used to measure activated doping concentration. 3C-SiC samples were implanted at room temperature with different energies (ranging from 30 to 150keV) and doses (from 1 to 5.4x1015cm-2) in order to obtain a 300nm thick box-like profile at 5x1020cm-3. To activate the dopant, the samples were then annealed from 1150°C to 1350°C for 1h to 4h. Titanium-nickel c-TLM contacts annealed at 1000°C under argon showed the best results in terms of specific contact resistance (8x10-6.cm2) after a 1350°C–1h annealing. For this annealing condition, the activation rate was assessed by SSRM around 13%. This value confirms the difficulty to activate the dopants introduced into the 3C-SiC as the temperature is limited by the silicon substrate. However, this work demonstrates that low resistance values can be achieved on 3C-SiC, using nitrogen implantation at room temperature.
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