Arsenic pressure dependence of composition x in AlxIn1−xAs grown by molecular beam epitaxy
1988; Elsevier BV; Volume: 87; Issue: 2-3 Linguagem: Inglês
10.1016/0022-0248(88)90175-3
ISSN1873-5002
AutoresTsuyoshi Nakagawa, Shun‐ichi Gonda, Shūichi Emura, Saburo Shimizu,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoThe dependence of the composition x of AlxIn1−xAs on the arsenic pressure and substrate temperature in molecular beam epitaxy is investigated. At a growth temperature of 540°C, the composition scarcely depends on the arsenic pressure, but at 580°C the Al composition decreases with increasing arsenic pressure under a constant flux ratio of group III elements. The dependence of composition x on the arsenic pressure and substrate temperature can be explained semiquantitatively using a modified thermodynamical model.
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