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Fundamental Role of Creation and Activation in Radiation-Induced Defect Production in High-Purity Amorphous Si O 2

1996; American Physical Society; Volume: 76; Issue: 16 Linguagem: Inglês

10.1103/physrevlett.76.2926

1092-0145

V. A. Mashkov, Wm. R. Austin, Lin Zhang, R. G. Leisure,

Luminescence Properties of Advanced Materials

A model for the radiation-induced production of defects in amorphous insulators is proposed. It is shown that an irreversible creation of defects from network sites follows power law kinetics, and a reversible activation of precursor sites follows Kohlrausch kinetics. Electron spin resonance was used to measure the concentration of x-ray induced ${E}^{\ensuremath{'}}$ centers in high-purity amorphous Si${\mathrm{O}}_{2}$ over an extremely wide dose range with high precision. The agreement between theoretical and experimental defect densities, over more than 4 orders of magnitude in dose, is unprecedented.