A d.c. model for an MOS-transistor in the saturation region
1980; Elsevier BV; Volume: 23; Issue: 7 Linguagem: Inglês
10.1016/0038-1101(80)90135-5
ISSN1879-2405
Autores Tópico(s)Analog and Mixed-Signal Circuit Design
ResumoA d.c. model for an MOS-transistor, operating in the saturation region, is presented. Drain current as well as drain conductance are shown to be in good agreement with measurements. The saturation is characterised by two parameters f and z which can be determined from measured device characteristics. The saturation voltage is defined as the drain voltage at which the lateral component of the surface electric field at the channel end equals the value νsc/μ0.
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