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Electrical and optical properties of deep ultraviolet transparent conductive Ga 2 O 3 /ITO films by magnetron sputtering

2010; IOP Publishing; Volume: 31; Issue: 10 Linguagem: Inglês

10.1088/1674-4926/31/10/103001

2058-6140

Jianjun Liu, Yan Jin-liang, Liang Shi, Ting Li,

Electronic and Structural Properties of Oxides

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.