Controlled growth and subsequent chemical modification of poly(glycidyl methacrylate) brushes on silicon wafers
2004; Royal Society of Chemistry; Volume: 14; Issue: 4 Linguagem: Inglês
10.1039/b312513k
ISSN1364-5501
AutoresSteve Edmondson, Wilhelm T. S. Huck,
Tópico(s)Advanced Polymer Synthesis and Characterization
ResumoThe controlled growth of poly(glycidyl methacrylate) (PGMA) and poly(GMA-co-MMA) brushes by atom transfer radical polymerization (ATRP) in methanol/water has been demonstrated on silicon wafer surfaces. A polymerization system using copper(I) bromide, copper(II) chloride and 2,2′-dipyridyl was found to produce a nearly linear rate of growth for times of up to 4 h, giving brushes of up to 120 nm thickness. Reinitiation of these brushes to grow further PGMA demonstrated the living nature of the polymerization system. A trichlorosilane-functional initiator was used, and it was found that brushes grown from initiator layers deposited in the presence of a small amount of triethylamine were less rough and showed more linear growth with time. The reaction of the pendant epoxide group of these brushes with octylamine from solution was demonstrated.
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