Electrical characterization of ITO/ p -InP heterostructures
1993; American Institute of Physics; Volume: 73; Issue: 6 Linguagem: Inglês
10.1063/1.352988
ISSN1520-8850
Autores Tópico(s)Silicon and Solar Cell Technologies
ResumoAn analysis of current-voltage, capacitance-voltage properties of ITO/p-InP solar cell structures has been carried out. I-V-T properties of ITO/p-InP structures show that the conduction of diodes is dominated by defect-assisted tunnelling at low bias, and by thermionic emission at high bias similar to Schottky diodes. Experimental results gave an increased barrier height from thermionic-emission, an anomalously large intercept from 1/C2 vs VB plots on the bias axis and a near-surface depletion of carriers. Such anomalies could be removed by thermal annealing at temperatures, TA≥200 °C, or by etching a thin InP surface layer. All these results demonstrate the existence of a near surface n-type layer, which is a result of process-induced donor-like defects, and the ITO/InP junction is more likely a buried n/p junction.
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