As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors
1990; American Institute of Physics; Volume: 57; Issue: 21 Linguagem: Inglês
10.1063/1.104163
ISSN1520-8842
AutoresEli Yablonovitch, T. J. Gmitter, B. G. Bagley,
Tópico(s)Semiconductor materials and interfaces
ResumoMuch of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As2S3/GaAs amorphous/crystalline heterojunctions show some technological promise. We have found that properly prepared As2S3/GaAs interfaces can have reasonably good electronic quality. The interfacial recombination velocity is ≊15 000 cm/s at flat band, which results in a ∼100-fold reduction of perimeter recombination currents in p-n junction mesas. This can be important on heterojunction transistor emitter-base perimeters, solar cell and light-emitting diode perimeters, and for reducing mirror facet recombination in semiconductor lasers.
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