Formation of cubic-AlN layer on MgO(1 0 0) substrate
1998; Elsevier BV; Volume: 189-190; Linguagem: Inglês
10.1016/s0022-0248(98)00329-7
ISSN1873-5002
AutoresSoichiro Okubo, Noriyoshi Shibata, Tomohiro Saito, Yuichi Ikuhara,
Tópico(s)Ga2O3 and related materials
ResumoEpitaxial cubic(c)-AlN(1 0 0) layer has been formed at an interface between hexagonal(h)-AlN film and MgO(1 0 0) substrate by molecular beam epitaxy assisted with electron–cyclotron–resonance plasma excitation. The c-AlN layer observed by TEM was as thin as 3–4 nm. The h-AlN film was 〈1 0 1〉-oriented polycrystalline. On the other hand, epitaxial h-AlN(0 0 1) film has been grown directly on MgO(1 1 1) substrate with the epitaxial relationships of AlN[0 1 0]‖MgO[1 1 2̄] and AlN[2 1̄ 0]‖MgO[1 1̄ 0].
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