Crack-healing in reaction-bonded silicon carbide
2003; Elsevier BV; Volume: 58; Issue: 7-8 Linguagem: Inglês
10.1016/j.matlet.2003.09.023
ISSN1873-4979
AutoresMin‐Cheol Chu, Seong‐Jai Cho, Hyunmin Park, Kyung‐Jin Yoon, Hyun Ryu,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoCrack healing in reaction-bonded silicon carbide (RBSC) was investigated by introducing cracks with the depth of 2.0–2.3 mm into flexure specimens and subsequently heat-treating the specimens at temperatures up to 1300 °C. Results showed that the cracks were healed by being filled with amorphous silica produced by the oxidation of silicon and silicon carbide. As the cracks were healed, the strength of cracked specimens was recovered to as much as 60% of the strength of as-machined specimens.
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