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UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

2002; Wiley; Volume: 192; Issue: 2 Linguagem: Inglês

10.1002/1521-396x(200208)192

1521-396X

Satoshi Kamiyama, Motoaki Iwaya, S. Takanami, Shinji Terao, Akira Miyazaki, Hiroshi Amano, Isamu Akasaki,

ZnO doping and properties

physica status solidi (a)Volume 192, Issue 2 p. 296-300 Original Paper UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density S. Kamiyama, S. Kamiyama [email protected] Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorM. Iwaya, M. Iwaya Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorS. Takanami, S. Takanami Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorS. Terao, S. Terao Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorA. Miyazaki, A. Miyazaki Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorH. Amano, H. Amano Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorI. Akasaki, I. Akasaki Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this author S. Kamiyama, S. Kamiyama [email protected] Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorM. Iwaya, M. Iwaya Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorS. Takanami, S. Takanami Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorS. Terao, S. Terao Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorA. Miyazaki, A. Miyazaki Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorH. Amano, H. Amano Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this authorI. Akasaki, I. Akasaki Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this author First published: 12 July 2002 https://doi.org/10.1002/1521-396X(200208)192:2 3.0.CO;2-ZCitations: 37AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Using a hetero-epitaxial lateral overgrowth (ELO) technology with low-temperature deposited AlN interlayer, high-quality crack-free Al0.22Ga0.78N with low dislocation density is realized. The dislocation density in the Al0.22Ga0.78N was reduced to as low as the order of 107 cm—2 over the whole wafer. Applying the high-quality AlGaN layer to a UV light-emitting diode (LED), high output power of more than 0.1 mW at a forward current of 50 mA has been demonstrated with the emission peak wavelengths from 323 to 352 nm. The highest output power of 0.6 mW is obtained for the 352 nm LED with GaN/AlGaN multiple quantum well active layer. The emission efficiency was dependent on the wavelength, and the 323 nm LED has the lowest output power of 0.18 mW at 50 mA bias. One of the factors determining the external quantum efficiency is thought to be an inferior hole spread in highly resistive p-type layers. References [1] H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, Appl. Phys. Lett. 48, 353 (1986). [2] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989). [3] I. Akasaki, H. Amano, K. Itoh, N. Koide, and K. Manabe, Inst. Phys. Conf. 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