Preparation of stoichiometric barium stannate thin films: Hall measurements and gas sensitivities
1997; Elsevier BV; Volume: 44; Issue: 1-3 Linguagem: Inglês
10.1016/s0925-4005(97)00141-x
ISSN1873-3077
AutoresBernhard Ostrick, Maximilian Fleischer, U. Lampe, H. Meixner,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoBarium stannate (BaSnO3) is a typical compound with cubic perovskite lattice. For the first time thin films with a Ba/Sn ratio of 1 were prepared by radio frequency (r.f.) sputtering. Hall measurements were performed on the thin films in a temperature range between 600°C and 1050°C. The variation of Hall mobility and charge-carrier density was investigated in the oxygen partial pressure range between 102 Pa and 105 Pa. The gas sensitivities of the material in wet air were investigated by resistance measurements of sensor chips with sputtered BaSnO3 thin films. The material showed interesting responses to the reducing gases isobutene, H2, NO, CH4 and CO in application-relevant concentrations. The best sensitivities were obtained at temperatures below 700°C. At temperatures of 600°C the thin films showed response times of typically 3 min. The material was found to be insensitive to CO2 and NH3.
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