A-plane GaN layer grown on (302) (-LiAlO2 by MOCVD
2009; Elsevier BV; Volume: 484; Issue: 1-2 Linguagem: Inglês
10.1016/j.jallcom.2009.05.006
ISSN1873-4669
Autores Tópico(s)ZnO doping and properties
ResumoSingle phase a-GaN layer has been grown on the small lattice mismatch (3 0 2) (-LiAlO2 (LAO) substrate. The epitaxial relationships between a-plane GaN and (3 0 2) LAO are [11¯00]GaN||[203]LAO=−2.86% and [0001]GaN||[010]LAO=−0.31%. The diffraction angle for GaN (112¯0) layer presents a 0.12% extension parallel to the growth direction [112¯0] due to lattice mismatch and thermal mismatch. The compressive stress is gradually released with the a-GaN layer growth indicated by the E2 frequency of Raman spectra. The a-GaN layer has high transmittance (85%), sharp absorption edge and observed excitonic absorption. The photoluminescence (PL) shows that the donor acceptor pair emission peak energy is ∼3.41 eV with full width at half maximum value (FWHM) of 105 meV and weak yellow peaks originate from the incorporation of Li into GaN as a result of the decomposition of the substrate while ramping up temperatures. These results show that (3 0 2) LAO is a promising substrate for fabricating high-quality a-GaN layer and device.
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