Infrared emission studies of the A3Σ−–X3Π electronic transition of the SiC radical
2004; Elsevier BV; Volume: 228; Issue: 1 Linguagem: Inglês
10.1016/j.jms.2004.06.016
ISSN1096-083X
Autores Tópico(s)Photochemistry and Electron Transfer Studies
ResumoThe gas phase infrared emission spectrum of the A3Σ−–X3Π electronic transition of SiC has been observed using a high resolution Fourier transform spectrometer. Three bands ν′ − ν″ = 0–1, 0–0, and 1–0 have been observed in the 2770, 3723, and 4578 cm−1 regions, where the 0–1 and 0–0 bands were observed for the first time. The SiC radical was generated by a dc discharge in a flowing mixture of hexamethyl disilane [(CH3)6Si2] and He. A total of 1074 rotational transitions assigned to the 0–1, 0–0, and 1–0 bands have been combined in a simultaneous analysis with previously reported pure rotational data to determine the molecular constants for SiC in the two electronic states. The principal equilibrium molecular constants for the A3Σ− state are: Be = 0.6181195(18) cm−1, αe = 0.0051921(20) cm−1, re = 1.8020884(26) Å, and Te = 3773.31(17) cm−1, with one standard deviation given in parentheses. The effect of a perturbation was recognized between the ν = 4 level of X3Π and the ν = 0 level of A3Σ, and the analysis was carried out to determine the interaction parameter between the two states.
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