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Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

2011; IOP Publishing; Volume: 22; Issue: 25 Linguagem: Inglês

10.1088/0957-4484/22/25/254023

1361-6528

Kyungah Seo, Insung Kim, Seungjae Jung, Minseok Jo, Sangsu Park, Jubong Park, Jungho Shin, Kuyyadi P. Biju, Jaemin Kong, Kwanghee Lee, Byoung-Hun Lee, Hyunsang Hwang,

Photoreceptor and optogenetics research

We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.