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BIBTEX RIS

Roughening of steps during homoepitaxial growth on Si(001)

1993; American Physical Society; Volume: 71; Issue: 25 Linguagem: Inglês

10.1103/physrevlett.71.4190

ISSN

1092-0145

Autores

Fang Wu, S. G. Jaloviar, D. E. Savage, M. G. Lagally,

Tópico(s)

Advanced Electron Microscopy Techniques and Applications

Resumo

The two-dimensional kinetic roughening of steps on vicinal Si(001) has been analyzed with scanning tunneling microscopy for growth at different rates, doses, and temperatures. Growth exponents for the evolution of the step roughness are extracted. They suggest extremely ineffective relaxation mechanisms for the rough step.

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