Stacking Fault Energy of Silicon Carbide (SiC) Polytypes
1995; Wiley; Volume: 30; Issue: 8 Linguagem: Inglês
10.1002/crat.2170300821
ISSN1521-4079
Autores Tópico(s)Advanced Surface Polishing Techniques
ResumoAbstract A polytypic material grown under similar thermodynamic conditions occurs in several phases which are included as ordered and disordered ones. These phases occur with a minimum free energy difference ≅ kT. This relative free energy (stacking fault energy) has been evaluated here using different methods.
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