Artigo Revisado por pares

Stacking Fault Energy of Silicon Carbide (SiC) Polytypes

1995; Wiley; Volume: 30; Issue: 8 Linguagem: Inglês

10.1002/crat.2170300821

ISSN

1521-4079

Autores

Momeen, M.Y. Khan,

Tópico(s)

Advanced Surface Polishing Techniques

Resumo

Abstract A polytypic material grown under similar thermodynamic conditions occurs in several phases which are included as ordered and disordered ones. These phases occur with a minimum free energy difference ≅ kT. This relative free energy (stacking fault energy) has been evaluated here using different methods.

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