Role of short-circuiting pathways in reduced ZnO varistors
1985; American Institute of Physics; Volume: 58; Issue: 11 Linguagem: Inglês
10.1063/1.335533
ISSN1520-8850
AutoresE. Sonder, Lionel M. Levinson, W. Katz,
Tópico(s)Ion-surface interactions and analysis
ResumoElectrical measurements and secondary ion mass spectrometry (SIMS) observations have been made to elucidate the mechanisms involved in the degradation of ZnO varistors at elevated temperatures in reducing atmospheres. The electrical measurements indicate that the degradation sensitivity depends to some extent on varistor composition but can be highly variable for different varistors of the same formulation and even within a given varistor sample. The SIMS data indicate that oxygen ions are highly mobile when varistors are heated above 290 °C, and it is proposed that flaws, such as microcracks in the varistors, act as conduits for oxygen at elevated temperatures. A circuit model in which a reduced varistor is characterized by short-circuiting regions around such flaws predicts an electric field versus current density that is similar to that observed in experiments.
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