Optoelectronic applications of LTMBE III–V materials
1993; Elsevier BV; Volume: 22; Issue: 1 Linguagem: Inglês
10.1016/0921-5107(93)90224-b
ISSN1873-4944
Autores Tópico(s)GaN-based semiconductor devices and materials
ResumoA review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 °C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temperature-grown materials perfectly suited for use in high-speed optoelectronic devices. A number of issues which influence the application of these materials, such as growth temperature, use of an annealing process, layer thickness, and optical wavelength, are considered. Examples of low-temperature-grown semiconductor optoelectronic devices, including ultra-high-bandwidth photoconductive detectors, high-sensitivity, high-bandwidth MSM photodetectors, and optical temporal analyzers are demonstrated. While the discussion concentrates on low-temperature-grown GaAs, the lattice-mismatched ternary compound InxGa1−xAs/GaAs is also considered in the context of detection of the longer wavelengths used in optical communications.
Referência(s)