Nitride-based blue LEDs with GaN/SiN double buffer layers
2003; Elsevier BV; Volume: 47; Issue: 11 Linguagem: Inglês
10.1016/s0038-1101(03)00244-2
ISSN1879-2405
AutoresChih-Hung Kuo, S.J. Chang, Yan-Kuin Su, Chun-Kai Wang, Long Wu, Jinn‐Kong Sheu, Ten-Chin Wen, Wei‐Chih Lai, J.M. Tsai, Chien‐Chung Lin,
Tópico(s)ZnO doping and properties
ResumoGaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were prepared by metalorganic chemical vapor deposition. It was found that we could reduce defect density and thus improve crystal quality of the GaN epitaxial layers by using GaN/SiN double buffers. It was also found that we could use such a GaN/SiN double buffer to achieve more reliable nitride-based LEDs.
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