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Picosecond time-of-flight measurements of minority electrons in GaAs/AlGaAs quantum well structures

1986; American Institute of Physics; Volume: 48; Issue: 2 Linguagem: Inglês

10.1063/1.96979

1520-8842

R. A. Höpfel, Jagdeep Shah, D. Block, A. C. Gossard,

Integrated Circuits and Semiconductor Failure Analysis

We report direct measurements of drift velocities of photoexcited minority electrons in p-doped quantum well structures of GaAs/Al0.48Ga0.52As, using picosecond time-of-flight techniques. At low electric fields the electron mobility is strongly reduced by electron-hole scattering. At high fields (>8 kV/cm) negative differential mobility is observed, which we interpret as real-space and valley transfer of hot electrons into the X valley of Al0.48Ga0.52As. From the photoluminescence spectra the carrier temperatures at which the transfer effects occur are determined.