Investigation of atom-resolved domain boundaries on Si(111)7 × 7 surfaces by scanning tunneling microscopy
1995; Elsevier BV; Volume: 327; Issue: 3 Linguagem: Inglês
10.1016/0039-6028(94)00848-5
ISSN1879-2758
AutoresQian-Hua Gu, Zhifeng Ma, N. Liu, Xin Ge, Wenwu Zhao, Zheng Xue, S.J. Pang, Z.Y. Hua,
Tópico(s)Semiconductor materials and interfaces
ResumoSeveral regular defects along domain boundaries of clean Si(111)7 × 7 surfaces have been observed with scanning tunneling microscopy (STM). Combined with the dimer-adatom-stacking fault (DAS) model, their detailed atom structures are discussed. We have found three important elementary factors that determine the boundary structure. The most important factor is the strong interaction between dimer and adatom. The next, in some cases, is the difference between faulted half and unfaulted half. The third factor are other metastable triangle subunit structures (e.g. 5 × 5, etc.). Under certain conditions the atoms along the domain boundary will adjust to form such structures.
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