Ionic Transport in PbO SiO 2 ‐Melts (II) Transference Number Measurements
1980; Volume: 84; Issue: 3 Linguagem: Inglês
10.1002/bbpc.19800840304
ISSN0005-9021
AutoresWilliam Petuskey, H. Schmalzried,
Tópico(s)Advanced Physical and Chemical Molecular Interactions
ResumoAbstract The transference numbers of Pb and Si relative to the oxygen Hittorf reference frame in PbOSiO 2 melts were determined at 850°C between 0.3 ≤ x ≤ 0.6 using galvanic cells with liquid junctions and reversible oxygen electrodes. Silicon transference becomes appreciable at high PbO concentrations. The transference numbers, interdiffusion coefficient and electrical conductivity are related through a theoretical treatment of independent transport equations. It is shown that only three coefficients are necessary to characterize electrochemical transport in this quasibinary system. These are calculated as a function of a composition.
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