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Fabrication and characterization of BaSi 2 epitaxial films over 1 µm in thickness on Si(111)

2014; Institute of Physics; Volume: 53; Issue: 4S Linguagem: Inglês

10.7567/jjap.53.04er04

1347-4065

R. Takabe, Kotaro Nakamura, Masakazu Baba, Weiji Du, M. Ajmal Khan, Kaoru Toko, Masato Sasase, Kosuke O. Hara, Noritaka Usami, Takashi Suemasu,

Semiconductor materials and devices

We attempted to fabricate a -axis-oriented BaSi 2 epitaxial films up to 2180 nm in thickness. First, we investigated the influence of growth temperature and growth rate on the crystalline quality of approximately 400-nm-thick BaSi 2 layers, and then optimized the above two growth conditions based on X-ray diffraction measurements. We next grew BaSi 2 films with various layer thicknesses at 580 °C in the range between 100 and 2180 nm, and characterized their properties. The a -axis-oriented BaSi 2 thick epitaxial films had three epitaxial variants rotating 120° with each other around the surface normal. The microwave photoconductive decay measurements for the 1640-nm-thick BaSi 2 epitaxial film showed that the minority-carrier lifetime was approximately 8 µs at room temperature. These achievements open up the possibilities of thin-film solar cell applications of BaSi 2 .