Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability
1993; American Institute of Physics; Volume: 62; Issue: 25 Linguagem: Inglês
10.1063/1.109075
ISSN1520-8842
AutoresDavid Mui, Z. Wang, D. Biswas, A. L. Demirel, N. Teraguchi, J. Reed, H. Morkoç̌,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoWe report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.
Referência(s)