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Characterization of p -type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy

1988; American Institute of Physics; Volume: 64; Issue: 8 Linguagem: Inglês

10.1063/1.341356

1520-8850

Koki Saito, Eisuke Tokumitsu, Takeshi Akatsuka, Motoya Miyauchi, Takumi Yamada, Makoto Konagai, Kiyoshi Takahashi,

Semiconductor materials and interfaces

p-type GaAs with doping levels of up to 5.8×1020 cm−3 has been grown by metalorganic molecular-beam epitaxy (MOMBE) using carbon (C) as a dopant. The mobility and minority-carrier diffusion length of the C-doped MOMBE layers were comparable to those of Be-doped MBE layers. The diffusion coefficient of C at 900 °C was estimated to be 6×10−15 cm2 /s which is about two orders of magnitude less than that of Be (1×10−12 cm2 /s). In addition, the lattice constant of C-doped GaAs was found to be 5.6533 Å which completely matches that of the substrate, while the lattice constant of Be-doped GaAs decreases to 5.6467 Å at a doping level of 2×1020 cm−3 as reported by Lievin et al. [Inst. Phys. Conf. Ser. No. 79, 595 (1985)].