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Persistent luminescence fading in Sr_2MgSi_2O_7:Eu^2+,R^3+ materials: a thermoluminescence study

2012; Optica Publishing Group; Volume: 2; Issue: 3 Linguagem: Inglês

10.1364/ome.2.000287

2159-3930

Hermi F. Brito, Jorma Hölsä, H. Jungner, Taneli Laamanen, Mika Lastusaari, Marja Malkamäki, Lucas Carvalho Veloso Rodrigues,

Terahertz technology and applications

The fading of persistent luminescence in Sr2MgSi2O7:Eu2+,R3+ (R: Y, La-Nd, Sm-Lu) was studied combining thermoluminescence (TL) and room temperature (persistent) luminescence measurements to gain more information on the mechanism of persistent luminescence. The TL glow curves showed the main trap signal at ca. 80 °C, corresponding to 0.6 eV as the trap depth, with every R co-dopant. The TL measurements carried out with different irradiation times revealed the general order nature of the TL bands. The results obtained from the deconvolutions of the glow curves allowed the prediction of the fading of persistent luminescence with good accuracy, though only when using the Becquerel decay law.