Germanium and Silicon Rectifiers
1958; Institute of Electrical and Electronics Engineers; Volume: 46; Issue: 6 Linguagem: Inglês
10.1109/jrproc.1958.286891
ISSN2162-6634
Autores Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoTwo general types of rectifier are singled out for review in this paper. These are the silicon and germanium large area p-n junction rectifying cells. A discussion is given of various phenomena which have a bearing upon the volt-ampere characteristics. Methods for fabricating the various kinds of p-n junctions into rectifying cells are described and typical volt-ampere characteristics are given. Finally, a brief summary of the kinds of applications these rectifiers have filled is provided with some typical illustrations.
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