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Identification of the 0.82-eV Electron Trap, EL 2 in GaAs, as an Isolated Antisite Arsenic Defect

1985; American Physical Society; Volume: 55; Issue: 20 Linguagem: Inglês

10.1103/physrevlett.55.2204

1092-0145

M. Kamińska, Marek Skowroński, W. Kuszko,

Silicon and Solar Cell Technologies

$\mathrm{EL}2$ is a technologically important deep level in GaAs whose identification has been the subject of intense study. In this paper we present uniaxial stress and magnetic field experiments which establish for the first time that $\mathrm{EL}2$ has tetrahedral symmetry and is, therefore, an isolated point defect. Combining this result with earlier data, we conclude that $\mathrm{EL}2$ is an isolated arsenic antisite defect.