Mass transport of a Ag thin film on a stepped Si(111) surface
1991; Elsevier BV; Volume: 242; Issue: 1-3 Linguagem: Inglês
10.1016/0039-6028(91)90264-s
ISSN1879-2758
AutoresNanjian Wu, Akiko Natori, Hitoshi Yasunaga,
Tópico(s)Molecular Junctions and Nanostructures
ResumoThe mass transport of Ag on stepped Si(111) surfaces was investigated by a scanning Auger microscope (SAM). A highly anisotropic surface diffusion of Ag ultra-thin films was observed on 0°, 0.5°, 3° and 6° vicinal Si(111). The mass transport parallel to the step edge is overwhelmingly greater than that perpendicular to the edge. The preferential mass transport toward the cathode due to DC current heating was also observed. This increased with the resistivity of the Si(111) substrate. The anisotropic mass transport is correlated with the difference of the binding energies at the step edge sites and at the terrace sites.
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