Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor
2012; American Physical Society; Volume: 85; Issue: 1 Linguagem: Inglês
10.1103/physrevb.85.012504
ISSN1550-235X
AutoresO.-P. Saira, A. Kemppinen, V. F. Maisi, J. P. Pekola,
Tópico(s)Physics of Superconductivity and Magnetism
ResumoThe achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter \gamma. We infer upper bounds n_qp < 0.033 um^-3 and \gamma < 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.
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