Portal de Periódicos da CAPES

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

2012; American Institute of Physics; Volume: 100; Issue: 14 Linguagem: Inglês

10.1063/1.3699221

1520-8842

Thanh Thuy Trinh, Van Duy Nguyen, Nguyễn Hồng Hạnh, Jayapal Raja, Juyeon Jang, Kyungsoo Jang, Kyunghyun Baek, Vinh Ai Dao, Junsin Yi,

Advanced Memory and Neural Computing

Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.