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The Absorption Cross Section Of As In Si

1989; SPIE; Volume: 1108; Linguagem: Inglês

10.1117/12.960678

1996-756X

Jon Geist, M. G. Stapelbroek, M. D. Petroff,

Thin-Film Transistor Technologies

Infrared absorption cross sections of As in Si near zero Kelvin have recently been measured in two different investigations. The average of the integrals of the cross section over photon wavenumber was 8.64 x 10-13 cm-1. This is nearly equal to the value predicted by the oscillator-strength sum rule. Between 500 and 1000 cm-1, the absorption cross sections reported here agree very well with 0.7 times the currently accepted formula for the photoionization cross section of As in Si. Calibration errors in spreading resistance measurements on epitaxial layers seem to be the cause of the 0.7 multiplicative error in the photoionization formula. Above 1000 cm-1, 0.7 times the value from the formula predicts a larger photoionization cross section than the absorption cross sections reported here. This is apparently caused by the impact ionization of donor electrons from impurity atoms by energetic photoionized electrons.