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Effects of Oxygen Added to Reagent Gas on Chemical Vapor Deposition of Diamond Thin Films

1994; Institute of Physics; Volume: 33; Issue: 3B Linguagem: Inglês

10.1143/jjap.33.l459

1347-4065

T Kim, Takeshi Kobayashi,

Semiconductor materials and devices

The microwave-plasma-assisted chemical vapor deposition (CVD) of diamond film with ( H 2 +CO+O 2 ) gaseous source revealed increasing net growth rate with O 2 addition up to 0.5%, although the etching rate itself markedly increased with O 2 . To understand the effect of oxygen on CVD, we have proposed a possible model for diamond surface reaction, a modified Harris model [Appl. Phys. Lett. 56 (1990) 2298], by taking into account the forced hydrogen abstraction from the surface structure associated with chemical reaction with OH species. Our model, though still slightly rough, explained to a certain extent the observed increase in the diamond growth rate upon oxygen addition.