Fabrication of Co 2 MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer
2005; Institute of Physics; Volume: 44; Issue: 9R Linguagem: Inglês
10.1143/jjap.44.6535
ISSN1347-4065
AutoresYuya Sakuraba, Jun Nakata, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Akimasa Sakuma, T. Miyazaki,
Tópico(s)Advanced Welding Techniques Analysis
ResumoThin films of the full-Heusler compound, Co 2 MnAl, were grown on Cr-buffered MgO(001) substrates at different growth temperature and post-annealing temperature by magnetron sputtering. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements show that Cr-buffer layer can largely improve the surface morphology and structural quality of Co 2 MnAl film. The (001)-oriented epitaxial growth and B2 structure were confirmed by XRD measurements for all prepared samples. The smallest surface roughness (∼2 Å) and an identical M s value to the bulk value were obtained in the sample which was deposited at ambient temperature and post-annealed at 300°C.
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