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Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers

1991; Elsevier BV; Volume: 9; Issue: 1-3 Linguagem: Inglês

10.1016/0921-5107(91)90159-s

1873-4944

Alain Giani, J. Bougnot, F. Pascal‐Delannoy, G. Bougnot, J. Kaoukab, Guy-Germain Allogho, M. Bow,

Semiconductor Lasers and Optical Devices

Abstract The growth in the miscibility gap and the characterization of MOVPE Ga1−xInxAsySb1−y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying ΣPIII and DH2. The material quality has been assessed by single and double X-ray diffraction. The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response obtained under illumination from the GaSb side, presents a good response at 2.75 μm.