Alternative catalysts for VSS growth of silicon and germanium nanowires
2009; Royal Society of Chemistry; Volume: 19; Issue: 7 Linguagem: Inglês
10.1039/b817391e
ISSN1364-5501
AutoresJessica L. Lensch-Falk, Eric R. Hemesath, Daniel E. Perea, Lincoln J. Lauhon,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoMetal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.
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