SnGe superstructure materials for Si-based infrared optoelectronics
2003; American Institute of Physics; Volume: 83; Issue: 17 Linguagem: Inglês
10.1063/1.1622435
ISSN1520-8842
AutoresMaret Bauer, C. Cook, P. Aella, J. Tolle, J. Kouvetakis, Peter A. Crozier, A. V. G. Chizmeshya, David J. Smith, Stefan Zollner,
Tópico(s)Photonic and Optical Devices
ResumoWe report growth of device-quality, single-crystal SnxGe1−x alloys (with x=0.02–0.2) directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. The high Sn-content materials are stabilized with ordered superstructures that gives rise to a layered structure adjacent to the Si substrate. Density functional theory simulations were used to elucidate the structural and bonding behavior of this material. Optical determinations show a Ge-like band structure that is substantially redshifted compared to that of elemental Ge. Thus, these systems are excellent candidates for a new generation of infrared devices, with the critical advantage that they can be grown directly on Si.
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