Low-drive-voltage, low-loss AlGaAs/GaAs 2 × 2 switch
1988; Institution of Engineering and Technology; Volume: 24; Issue: 16 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresChristian Wüthrich, J. Faist, Wolfgang Baer, F. K. Reinhart,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe letter reports the realisation of a 2 × 2 switch using a Mach-Zehnder interferometer with tunable coupler sections. The structure is based on a GaAs-AlGaAs double heterostructure with SnO2-doped In2O3 electrodes. At a wavelength of 1.15 μm, this device is characterised by a low switching voltage of 7.5 V and a low loss of 4 dB/cm. A high extinction ratio of 20 dB can be achieved.
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