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Near-band-edge slow luminescence in nominally undoped bulk ZnO

2005; American Institute of Physics; Volume: 98; Issue: 1 Linguagem: Inglês

10.1063/1.1946200

1520-8850

T. Monteiro, A.J. Neves, M.C. Carmo, M.J. Soares, M. Peres, J. Wang, E. Alves, E. Rita, U. Wahl,

Ga2O3 and related materials

We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67meV and deep acceptor levels at 250 and 232meV.